Multiple avalanches across the metal-insulator transition of vanadium oxide nanoscaled junctions

被引：124

作者：

Sharoni, Amos ^{[1
]}

Ramirez, Juan Gabriel ^{[1
,2
]}

Schuller, Ivan K. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] Univ Valle, Thin Flim Grp, Cali, Colombia

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.101.026404

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The metal-insulator transition of nanoscaled VO(2) devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades in magnitude, indicating that the transition is caused by avalanches. We find a power law distribution of the jump sizes, demonstrating an inherent property of the VO(2) films. We report a surprising relation between jump magnitude and device size. A percolation model captures the general transport behavior, but cannot account for the statistical behavior.

引用

页数：4

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