Multiple avalanches across the metal-insulator transition of vanadium oxide nanoscaled junctions

被引:124
作者
Sharoni, Amos [1 ]
Ramirez, Juan Gabriel [1 ,2 ]
Schuller, Ivan K. [1 ]
机构
[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[2] Univ Valle, Thin Flim Grp, Cali, Colombia
关键词
D O I
10.1103/PhysRevLett.101.026404
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The metal-insulator transition of nanoscaled VO(2) devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades in magnitude, indicating that the transition is caused by avalanches. We find a power law distribution of the jump sizes, demonstrating an inherent property of the VO(2) films. We report a surprising relation between jump magnitude and device size. A percolation model captures the general transport behavior, but cannot account for the statistical behavior.
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页数:4
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