Two-dimensional current percolation in nanocrystalline vanadium dioxide films

被引：94

作者：

Rozen, J

Lopez, R

Haglund, RF

Feldman, LC

机构：

[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Inst Nanoscale Sci & Engn, Nashville, TN 37235 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 08期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2175490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Simultaneous measurements of the transmittance and the resistance were carried out on 20-nm-thick VO2 wires during the semiconductor-to-metal transition (SMT). They reveal an offset between the effective electrical and optical switching temperatures. This shift is due to current percolation through a network of nanometer-scale grains of different sizes undergoing a SMT at distinct temperatures. An effective-medium approximation can model this behavior and proves to be an indirect method to calculate the surface coverage of the films. (c) 2006 American Institute of Physics.

引用

页数：3

共 18 条

[1]

BERGLUND CN, 1969, PHYS REV, V185, P1022, DOI 10.1103/PhysRev.185.1022

[2] Microstructure and metal-insulating transition of VO2 thin films [J].