EFFECTS OF MICROSTRUCTURE AND NONSTOICHIOMETRY ON ELECTRICAL-PROPERTIES OF VANADIUM DIOXIDE FILMS

被引：57

作者：

KUSANO, E ^{[1
]}

THEIL, JA ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.576277

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1314 / 1317

页数：4

共 7 条

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[2] GRIFFITH.CH, 1974, J APPL PHYS, V45, P2201, DOI 10.1063/1.1663568
[3] DEPOSITION OF VANADIUM-OXIDE FILMS BY DIRECT-CURRENT MAGNETRON REACTIVE SPUTTERING
KUSANO, E
THEIL, JA
THORNTON, JA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1663 - 1667
[4] OPTICAL AND TRANSPORT PROPERTIES OF HIGH QUALITY CRYSTALS OF V2O4 NEAR METALLIC TRANSITION TEMPERATURE
LADD, LA
PAUL, W
[J]. SOLID STATE COMMUNICATIONS, 1969, 7 (04) : 425 - &
[5] MOKEROV VG, 1979, FIZ TVERD TELA+, V21, P855
[6] SAMASONOV GV, 1973, OXIDE HDB, P107
[7] HIGH-RATE THICK-FILM GROWTH
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