Modeling of the hysteretic metal-insulator transition in a vanadium dioxide infrared detector

被引：29

作者：

de Almeida, LAL ^{[1
]}

Deep, GS

Lima, AMN

Neff, H

机构：

[1] Univ Fed Campina Grande, Dept Elect Engn, BR-58109970 Campina Grande, PB, Brazil

[2] Univ Fed Bahia, Dept Elect Engn, BR-40210630 Salvador, BA, Brazil

[3] VIR TECH AS, DK-2630 Taastrup, Denmark

来源：

OPTICAL ENGINEERING | 2002年 / 41卷 / 10期

关键词：

vanadium dioxide; microbolometer; thermal hysteresis; sensor; infrared imaging; hysteresis model; minor loop; major loop; accommodation process; metal-insulator transition; composite medium; effective-medium approximation; percolation; phase transition;

D O I：

10.1117/1.1501095

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The vanadium dioxide (VO2) thin film, usually employed as an infrared detector, exhibits hysteresis in its resistance-temperature characteristic. Considering a polycrystalline VO2 thin film as a composite medium, containing semiconducting and metallic microcrystals, the well-known effective-medium approximation theory is employed to relate the volume fraction of the semiconducting microcrystals to the effective film resistance. A phenomenological model is first proposed for describing the hysteretic dependence of volume fraction on temperature. From this, a model for hysteresis in the resistance-temperature characteristic is then derived, and a procedure for estimating the model parameters is outlined. The model reproduces the more important hysteretic characteristics such as the major, minor, and nested loops, in good agreement with the experimental characteristics. (C) 2002 Society or Photo-Optical Instrumentation Engineers.

引用

页码：2582 / 2588

页数：7

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