THIN-FILM RESISTANCE BOLOMETER IR DETECTORS .2.

被引：35

作者：

LIDDIARD, KC

机构：

[1] Dep of Defence, Electronics Research, Lab, Adelaide, Aust, Dep of Defence, Electronics Research Lab, Adelaide, Aust

来源：

INFRARED PHYSICS | 1986年 / 26卷 / 01期

关键词：

D O I：

10.1016/0020-0891(86)90046-1

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：43 / 49

页数：7

共 7 条

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LEWIS, AJ .

PHYSICAL REVIEW B, 1976, 13 (06) :2565-2575

[2] THIN-FILM RESISTANCE BOLOMETER IR DETECTORS [J].

LIDDIARD, KC .

INFRARED PHYSICS, 1984, 24 (01) :57-64

[3] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING [J].

PAUL, W ;

LEWIS, AJ ;

CONNELL, GAN ;

MOUSTAKAS, TD .

SOLID STATE COMMUNICATIONS, 1976, 20 (10) :969-972

[4] INFLUENCE OF DEPOSITION CONDITIONS ON SPUTTER-DEPOSITED AMORPHOUS SILICON [J].

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[5] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J].

SPEAR, WE ;

LECOMBER, PG .

PHILOSOPHICAL MAGAZINE, 1976, 33 (06) :935-949

[6] RECENT APPLIED DEVELOPMENTS IN THE AMORPHOUS-SILICON FIELD [J].

SPEAR, WE ;

LECOMBER, PG ;

SNELL, AJ ;

GIBSON, RA .

THIN SOLID FILMS, 1982, 90 (04) :359-370

[7] SUBSTITUTIONAL DOPING OF CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON [J].

TANIGUCHI, M ;

HIROSE, M ;

OSAKA, Y .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :126-131

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