Write current reduction in transition metal oxide based resistance-change memory

被引：149

作者：

Ahn, Seung-Eon

Lee, Myoung-Jae ^{[1
]}

Park, Youngsoo ^{[1
]}

Kang, Bo Soo ^{[1
]}

Lee, Chang Bum ^{[1
]}

Kim, Ki Hwan ^{[1
]}

Seo, Sunae

Suh, Dong-Seok

Kim, Dong-Chirl ^{[1
]}

Hur, Jihyun ^{[1
,2
]}

Xianyu, Wenxu ^{[1
]}

Stefanovich, Genrikh ^{[1
]}

Yin, Hit. Axiang ^{[1
]}

Yoo, In-Kyeong ^{[1
]}

Lee, Atng-Hyun

Park, Jong-Bong ^{[3
]}

Baek, In-Gyu ^{[4
]}

Park, Bae Ho ^{[5
]}

机构：

[1] Samsung Adv Inst Technol, Semicond Design Lab, Suwon 440600, South Korea

[2] Samsung Adv Inst Technol, Nano Fabricat Technol Ctr, Suwon 440600, South Korea

[3] Samsung Adv Inst Technol, Analyt Engn Ctr, Suwon 440600, South Korea

[4] Samsung Adv Inst Technol, Adv Proc Dev Team, Semicond R&D Ctr, Suwon 440600, South Korea

[5] Konkuk Univ, Dept Phys, Seoul 143701, South Korea

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 05期

关键词：

D O I：

10.1002/adma.200702081

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A novel memory cell structure with a Pt/Ti-doped NiO/Pt architecture is shown to exhibit the lowest write current reported thus far for a unipolar switching resistance-change-based device, as shown in the figure. The write current decreases dramatically upon scaling to cell sizes smaller than 100 nm x 100 nm. High-density universal memory can be fabricated by combining this node element with a selective switch.

引用

页码：924 / +

页数：6

共 31 条

[1] Demonstrated reliability of 4-Mb MRAM
Åkerman, J
Brown, P
DeHerrera, M
Durlam, M
Fuchs, E
Gajewski, D
Griswold, M
Janesky, J
Nahas, JJ
Tehrani, S
[J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2004, 4 (03) : 428 - 435
[2] [Anonymous], S VLSI TECHN
[3] Baek IG, 2005, INT EL DEVICES MEET, P769
[4] Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
Baek, IG
Lee, MS
Seo, S
Lee, MJ
Seo, DH
Suh, DS
Park, JC
Park, SO
Kim, HS
Yoo, IK
Chung, UI
Moon, JT
[J]. IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 587 - 590
[5] Reproducible switching effect in thin oxide films for memory applications
Beck, A
Bednorz, JG
Gerber, C
Rossel, C
Widmer, D
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (01) : 139 - 141
[6] Brewer JE, 2005, IEEE CIRCUITS DEVICE, V21, P13, DOI 10.1109/MCD.2005.1414313
[7] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715
Choi, BJ
Jeong, DS
Kim, SK
Rohde, C
Choi, S
Oh, JH
Kim, HJ
Hwang, CS
Szot, K
Waser, R
Reichenberg, B
Tiedke, S
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)
[8] CHOI BJ, 2006, APPL PHYS LETT, V89, P906
[9] Electronically configurable molecular-based logic gates
Collier, CP
Wong, EW
Belohradsky, M
Raymo, FM
Stoddart, JF
Kuekes, PJ
Williams, RS
Heath, JR
[J]. SCIENCE, 1999, 285 (5426) : 391 - 394
[10] CZUBATYJ W, 2006, EUR PHAS CHANG OV S

← 1 2 3 4 →