Dielectric response and structure of in-plane tensile strained BaTiO3 thin films grown on the LaNiO3 buffered Si substrate

被引：27

作者：

Qiao, Liang ^{[1
]}

Bi, Xiaofang ^{[1
]}

机构：

[1] Beijing Univ Aeronaut & Astronaut, Dept Mat Sci & Engn, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 06期

关键词：

D O I：

10.1063/1.2857462

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly (001)-textured BaTiO3 films were grown epitaxially on the LaNiO3 buffered Si substrate. A strong in-plane tensile strain has been revealed by using x-ray diffraction and high resolution transmission electron microscopy. The BaTiO3 film has exhibited a small remnant polarization, indicating the presence of ca(1)/ca(2)/ca(1)/ca(2) polydomain state in the film. Temperature dependent dielectric permittivity has demonstrated that two phase transitions occurred at respective temperatures of 170 and 30 degrees C. The result was discussed in detail based on the misfit strain-temperature phase diagrams theory. (C) 2008 American Institute of Physics.

引用

页数：3

共 18 条

[1] Enhancement of ferroelectricity in strained BaTiO3 thin films [J].

Choi, KJ ;

Biegalski, M ;

Li, YL ;

Sharan, A ;

Schubert, J ;

Uecker, R ;

Reiche, P ;

Chen, YB ;

Pan, XQ ;

Gopalan, V ;

Chen, LQ ;

Schlom, DG ;

Eom, CB .

SCIENCE, 2004, 306 (5698) :1005-1009

[2] Strains in BaTiO3 thin film deposited onto Pt-coated Si substrate [J].

Dkhil, Brahim ;

Defay, Emmanuel ;

Guillan, Julie .

APPLIED PHYSICS LETTERS, 2007, 90 (02)

[3]

Emelyanov AY, 2001, INTEGR FERROELECTR, V32, P1035

[4] Room-temperature ferroelectricity in strained SrTiO3 [J].

Haeni, JH ;

Irvin, P ;

Chang, W ;

Uecker, R ;

Reiche, P ;

Li, YL ;

Choudhury, S ;

Tian, W ;

Hawley, ME ;

Craigo, B ;

Tagantsev, AK ;

Pan, XQ ;

Streiffer, SK ;

Chen, LQ ;

Kirchoefer, SW ;

Levy, J ;

Schlom, DG .

NATURE, 2004, 430 (7001) :758-761

[5] Growth dynamics and strain relaxation mechanisms in BaTiO3 pulsed laser deposited on SrRuO3/SrTiO3 [J].

He, JQ ;

Vasco, E ;

Dittmann, R ;

Wang, RH .

PHYSICAL REVIEW B, 2006, 73 (12)

[6] Strain-driven domain structure control and ferroelectric properties of BaTiO3 thin films [J].

Jimi, M ;

Ohnishi, T ;

Terai, K ;

Kawasaki, M ;

Lippmaa, M .

THIN SOLID FILMS, 2005, 486 (1-2) :158-161

[7] Polarization state-dependent stress effect on the dielectric properties of lead zirconate titanite thin films [J].

Kang, HD ;

Song, WH ;

Sohn, SH ;

Jin, HJ ;

Lee, SE ;

Chung, YK .

APPLIED PHYSICS LETTERS, 2006, 88 (17)

[8] Ferroelectric domains in epitaxial PbTiO3 and BaTiO3 thin films on MgO(100) [J].

Kim, S ;

Park, Y ;

Kang, Y ;

Park, W ;

Baik, S ;

Gruverman, AL .

THIN SOLID FILMS, 1998, 312 (1-2) :249-253

[9] Growing BaTiO3 thin films on Si(100) with MgO-buffer layers by sputtering [J].

Kim, S ;

Hishita, S .

THIN SOLID FILMS, 1996, 281 :449-452

[10] Domain formation in epitaxial Pb(Zr,Ti)O3 thin films [J].

Lee, KS ;

Choi, JH ;

Lee, JY ;

Baik, S .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) :4095-4102

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