Electrochemical deposition of ZnO1-xSx thin films using three-step pulse

被引:4
作者
Fathy, N [1 ]
Ichimura, M [1 ]
机构
[1] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Showa Ku, Nagoya, Aichi 4668555, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 42-45期
关键词
ZnO1-xSx; thin film; electrochemical deposition; three-step pulse; bandgap bowing;
D O I
10.1143/JJAP.44.L1295
中图分类号
O59 [应用物理学];
学科分类号
摘要
ZnO1-xSx thin films with 0 <= x <= 0.5 were deposited by electrochemical deposition from acidic solutions containing ZnCl2 and Na2S2O3 of different concentrations. The as-deposited films are of thicknesses around 0.5 mu m. We used a new pulse form for deposition, i.e., the three-step pulse. The sulfur content increases with increasing concentration of Na2SO3 at low concentration range. Further increase in Na2S2O3 concentration results in decrease in the sulfur content due to the formation of the sulfur colloids. A decrease in the bandgap energy with increasing sulfur context x was obtained. The bandgap bowing parameter was found to be about 4 eV.
引用
收藏
页码:L1295 / L1297
页数:3
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