Effect of oxygen on the electronic band structure in ZnOxSe1-x alloys

The effect of alloying small amounts of ZnO with ZnSe on the electronic band structure has been studied. Optical transitions in molecular-beam-epitaxy-grown ZnOxSe1-x epitaxial films (0less than or equal toxless than or equal to1.35%) were investigated using photoreflectance and photoluminescence spectroscopies. The fundamental band-gap energy of the alloys was found to decrease at a rate of about 0.1 eV per atomic percent of oxygen. The pressure dependence of the band gap was also found to be strongly affected by O incorporation. Both the effects can be quantitatively explained by an anticrossing interaction between the extended states of the conduction band of ZnSe and the highly localized oxygen states located at approximately 0.22 eV above the conduction-band edge. (C) 2003 American Institute of Physics.