Electron mobility enhancement using ultrathin pure Ge on Si substrate

被引：43

作者：

Yeo, CC ^{[1
]}

Cho, BJ

Gao, E

Lee, SJ

Lee, AH

Yu, CY

Liu, CW

Tang, LJ

Lee, TW

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore

[2] Elect Res & Serv Org, Ind Technol Res Inst, Hsinchu 310, Taiwan

[3] Inst Microelect, Singapore 117685, Singapore

[4] Jusung Engn Co Ltd, Kyunggido 464892, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 10期

关键词：

effective electron mobility; Ge; high-K gate dielectric;

D O I：

10.1109/LED.2005.855420

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate enhancement of electron mobility in nMOSFET using an ultrathin pure Ge crystal channel layer directly grown on a bulk Si wafer. A thin Si crystal layer is also grown on top of a Ge crystal channel layer as a capping layer. Using the Si/Ge/Si structure, a maximum 2.2X enhancement in electron mobility is achieved while good gate dielectric properties and junction qualities of bulk Si devices are maintained.

引用

页码：761 / 763

页数：3

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