Incorporation of amorphous and microcrystalline silicon in n-i-p solar cells

被引:21
作者
van Veen, MK [1 ]
van der Werf, CHM [1 ]
Rath, JK [1 ]
Schropp, REI [1 ]
机构
[1] Univ Utrecht, Debye Inst, SID Phys Devices, NL-3508 TA Utrecht, Netherlands
关键词
hot-wire chemical vapor deposition; amorphous silicon; microcrystalline silicon; solar cells;
D O I
10.1016/S0040-6090(03)00114-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have investigated the material properties and n-i-p solar cell quality of hot-wire deposited amorphous and microcrystalline silicon. Although it is possible to make high quality amorphous silicon solar cells, occasionally many cells show shunting behavior. Therefore, better control over the variation in cell performance is needed. We prove that this behavior is correlated with the filament age and different methods for improving the reproducibility of the cell performance are presented. Furthermore, the influence of different deposition parameters of microcrystalline silicon layers on the material and solar cell properties was studied. Although some of these microcrystalline layers are porous and oxidize in air, an initial efficiency of 4.8% is obtained for an n-i-p cell on untextured stainless steel. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:216 / 219
页数:4
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