Reconstruction and stoichiometry of CdTe(001) surfaces. A grazing incidence X-ray diffraction and reflection high energy electron diffraction study

被引:18
作者
Veron, MB
Etgens, VH
SauvageSimkin, M
Tatarenko, S
Daudin, B
BrunLeCunff, D
机构
[1] LAB MINERAL CRISTALLOG,F-75005 PARIS,FRANCE
[2] UNIV GRENOBLE 1,SPECTROMETRIE PHYS LAB,CNRS,F-38402 ST MARTIN DHERES,FRANCE
[3] LPI,SPMM,DEPT RECH FONDAMENTALE MAT CONDESEE,CEA,F-38054 GRENOBLE,FRANCE
关键词
D O I
10.1016/0022-0248(95)00775-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We present X-ray diffraction measurements on the CdTe(001) surface. In-plane and out-of-plane scattering were used to solve the structure of the c(2 X 2) surface. The basic structural unit consists in two Cd atoms bounded to Te in an almost flat ''bridge model'' giving a coverage of 0.5 ML Cd. This arrangement is followed by a strong relaxation of the underlying substrate down to the sixth atomic layer. This model is in full agreement with the first principles calculations for the ZnSe c(2 X 2) structure. A strong anisotropy of the reconstructed domain dimensions was observed, for the surfaces formed above 280 degrees C. For the low temperature (2 X 1) Te surface, a new method has been applied to determine the surface stoichiometry. This method is based on the variation of the specular beam intensity in reflection high energy electron diffraction (RHEED) during the homoepitaxial growth, combined with the results obtained for the relaxation in highly strained CdTe/ZnTe structures grown by atomic layer epitaxy. The coverage of the (2 X 1) Te surface was estimated to be 1.5 ML.
引用
收藏
页码:694 / 702
页数:9
相关论文
共 25 条
[1]   THEORY OF RECONSTRUCTION INDUCED SUBSURFACE STRAIN - APPLICATION TO SI(100) [J].
APPELBAUM, JA ;
HAMANN, DR .
SURFACE SCIENCE, 1978, 74 (01) :21-33
[2]  
BORN M, 1988, PRINCIPLES OPTICS
[3]   ZNSE(100) SURFACE - ATOMIC CONFIGURATIONS, COMPOSITION, AND SURFACE DIPOLE [J].
CHEN, W ;
KAHN, A ;
SOUKIASSIAN, P ;
MANGAT, PS ;
GAINES, J ;
PONZONI, C ;
OLEGO, D .
PHYSICAL REVIEW B, 1994, 49 (15) :10790-10793
[4]   ZNSE(100) - THE SURFACE AND THE FORMATION OF SCHOTTKY BARRIERS WITH AL AND AU [J].
CHEN, W ;
KAHN, A ;
SOUKIASSIAN, P ;
MANGAT, PS ;
GAINES, J ;
PONZONI, C ;
OLEGO, D .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2639-2645
[5]   CRITICAL THICKNESS IN EPITAXIAL CDTE/ZNTE [J].
CIBERT, J ;
GOBIL, Y ;
DANG, LS ;
TATARENKO, S ;
FEUILLET, G ;
JOUNEAU, PH ;
SAMINADAYAR, K .
APPLIED PHYSICS LETTERS, 1990, 56 (03) :292-294
[6]   SURFACE STOICHIOMETRY DETERMINATION USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND ATOMIC-LAYER EPITAXY - THE CASE OF ZNTE(100) [J].
DAUDIN, B ;
TATARENKO, S ;
CUNFF, DB .
PHYSICAL REVIEW B, 1995, 52 (11) :7822-7825
[7]   STRUCTURAL STUDY OF INSITU GROWN TE/GAAS(001) INTERFACES BY GRAZING-INCIDENCE X-RAY-DIFFRACTION [J].
ETGENS, VH ;
PINCHAUX, R ;
SAUVAGESIMKIN, M ;
MASSIES, J ;
JEDRECY, N ;
GREISER, N ;
TATARENKO, S .
SURFACE SCIENCE, 1991, 251 :478-482
[8]  
FASHINGER W, 1990, J CRYST GROWTH, V99, P566
[9]   SURFACE DIFFRACTION BEAMLINE AT ESRF [J].
FERRER, S ;
COMIN, F .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1995, 66 (02) :1674-1676
[10]   1ST-PRINCIPLES STUDY OF ZN-STABILIZED AND SE-STABILIZED ZNSE(100) SURFACE RECONSTRUCTIONS [J].
GARCIA, A ;
NORTHRUP, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2678-2683