Bulk-limited current conduction in amorphous InGaZnO thin films

被引：48

作者：

Chung, Hyun-Joong ^{[1
]}

Jeong, Jong Han ^{[1
]}

Ahn, Tae Kyung ^{[1
]}

Lee, Hun Jung ^{[1
]}

Kim, Minkyu ^{[1
]}

Jun, Kyungjin ^{[1
]}

Park, Jin-Seong ^{[1
]}

Jeong, Jae Kyeong ^{[1
]}

Mo, Yeon-Gon ^{[1
]}

Kim, Hye Dong ^{[1
]}

机构：

[1] Samsung SDI Co Ltd, Corp Res & Dev Ctr, Gyeonggi 449902, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 03期

关键词：

D O I：

10.1149/1.2826332

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The current conduction mechanism in radio frequency sputtered amorphous indium gallium zinc oxide (a-IGZO) films was investigated using model devices designed to mimic the carrier injection from an electrode to an a-IGZO channel in thin-film transistors. Interface-limited mechanisms, such as thermionic emission and Fowler-Nordheim tunneling, clearly fail to fit the current-voltage (I-V) curves. Instead, the I-V characteristics of the a-IGZO devices fit well within the framework of space-charge-limited current, whereas the conduction is enhanced by the Frenkel effect at high field (>0.1 MV/cm). (c) 2007 The Electrochemical Society.

引用

页码：H51 / H54

页数：4

共 22 条

[1] Electrical characterization of radio frequency sputtered hydrogenated amorphous silicon carbide films [J].

Choi, WK ;

Han, LJ ;

Loo, FL .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (01) :276-280

[2] CONDUCTION MECHANISM OF NON-OHMIC ZINC-OXIDE CERAMICS [J].

EDA, K .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2964-2972

[3] HOPPING CONDUCTION IN INSULATING RF-SPUTTERED ZINC-OXIDE FILMS [J].

GUPTA, V ;

MANSINGH, A .

PHYSICAL REVIEW B, 1994, 49 (03) :1989-1995

[4]

HIRAO T, 2006, P SID, V37, P18

[5] Extracting parameters from the current-voltage characteristics of field-effect transistors [J].

Horowitz, G ;

Lang, P ;

Mottaghi, M ;

Aubin, H .

ADVANCED FUNCTIONAL MATERIALS, 2004, 14 (11) :1069-1074

[6] Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application [J].

Hosono, Hideo .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :851-858

[7] Bulk- or interface-limited electrical conductions in IrO2(Ba,Sr)TiO3/IrO2 thin film capacitors [J].

Hwang, CS .

JOURNAL OF MATERIALS RESEARCH, 2001, 16 (12) :3476-3484

[8]

JEONG JK, 2007, P IMID DAEG KOR, P145

[9] Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].

Kang, Donghun ;

Lim, Hyuck ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechoel ;

Park, Youngsoo ;

Chung, JaeGwan .

APPLIED PHYSICS LETTERS, 2007, 90 (19)

[10]

Kao K C, 1981, ELECT TRANSPORT SOLI

← 1 2 3 →