Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors

被引：59

作者：

Zhang, J

Boiadjieva, N

Chulkova, G

Deslandes, H

Gol'tsman, GN

Korneev, A

Kouminov, P

Leibowitz, A

Lo, W

Malinsky, R

Okunev, O

Pearlman, A

Slysz, W

Smirnov, K

Tsao, C

Verevkin, A

Voronov, B

Wilsher, K

Sobolewski, R

机构：

[1] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA

[2] Univ Rochester, Laser Energet Lab, Rochester, NY 14627 USA

[3] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[5] NPTest Inc, San Jose, CA 95134 USA

[6] Moscow State Pedag Univ, Dept Phys, Moscow 119435, Russia

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 14期

关键词：

D O I：

10.1049/el:20030710

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.

引用

页码：1086 / 1088

页数：3

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