Development of 111 texture in Al films grown on SiO2/Si(001) by ultrahigh-vacuum primary-ion deposition

被引:24
作者
Kim, YW
Petrov, I
Greene, JE
Rossnagel, SM
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1996年 / 14卷 / 02期
关键词
D O I
10.1116/1.579899
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A high degree of 111 preferred orientation with minimal mosaic spread has been shown by many researchers to be essential for electromigration resistance in Al-based interconnects. We have found that ill texture can be greatly enhanced through the use of low-energy self-ion irradiation during deposition. In these experiments, 300-nm-thick Al layers were grown on SiO2 at 65 degrees C from highly ionized beams provided by an ultrahigh-vacuum primary-ion deposition (PID) source. Al+ ion energies E(Al+) and ion/neutral ratios J(Al+)/J(Al) were independently varied from 10 to 120 eV and from 0% to 68%, respectively. All PID Al films exhibited very strong 111 preferred orientations, which increased with increasing E(Al+) and/or J(Al+)/J(Al), and azimuthally symmetric x-ray diffraction pole figures with no measurable tilt. The full width at half-maximum intensity Delta omega of 111 omega-rocking curves decreased continuously from 9.6 degrees with E(Al+) = 10 eV and J(Al+)/J(Al) = 68% to 2.2 degrees with J(Al+)/J(Al) = 120 eV compared to 10.6 degrees for films deposited by thermal evaporation. This was accompanied by a continuous decrease in the average grain size from 370 nm for thermal deposition to 90 nm with E(Al+) = 120 eV. The PID Al firms exhibited a columnar microstructure with weak competitive column growth. Changing the beam energy after the formation of a continuous layer had only a minor effect on film texture, indicating that the degree of ion-irradiation-induced preferred orientation is controlled during nucleation and/or coalescence while local pseudomorphic forces dominate thereafter omega-rocking curves from a bilayer film consisting of a 20-nm-thick Al buffer layer grown by PID followed by a 280-nm-thick thermally evaporated Al overlayer were essentially identical to those obtained from 300-nm-thick single-layer PLD Al films. (C) 1996 American Vacuum Society.
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收藏
页码:346 / 351
页数:6
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