CORRELATION OF TEXTURE WITH ELECTROMIGRATION BEHAVIOR IN AL METALLIZATION

被引:109
作者
KNORR, DB
TRACY, DP
RODBELL, KP
机构
[1] RENSSELAER POLYTECH INST,DEPT MAT ENGN,TROY,NY 12180
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.105745
中图分类号
O59 [应用物理学];
学科分类号
摘要
Aluminum films deposited at three different conditions, such that texture is the only microstructural variable, were tested for electromigration behavior. Texture analysis shows that random and (111) fiber texture components are present in the films deposited by both partially ionized beam (PIB), physical vapor deposition and sputtering. Two parameters are required to properly quantify the texture: (111) volume fraction and the distribution (half-width) of the (111) fiber component. As the (111) texture becomes stronger, the median time to failure increases, while the failure standard deviation decreases. Previous texture correlations are based on incomplete information, so they cannot predict electromigration behavior in all cases.
引用
收藏
页码:3241 / 3243
页数:3
相关论文
共 20 条
[1]   EFFECT OF MICROSTRUCTURE ON ELECTROMIGRATION LIFE OF THIN-FILM AL-CU CONDUCTORS [J].
AGARWALA, BN ;
PATNAIK, B ;
SCHNITZE.R .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1487-&
[2]   ELECTROMIGRATION DAMAGE IN ALUMINUM FILM CONDUCTORS [J].
ATTARDO, MJ ;
ROSENBERG, R .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) :2381-+
[3]  
Black J.R., 1968, 6 ANN REL PHYS S P, P148
[4]   GRAIN-SIZE DEPENDENCE OF ELECTROMIGRATION-INDUCED FAILURES IN NARROW INTERCONNECTS [J].
CHO, J ;
THOMPSON, CV .
APPLIED PHYSICS LETTERS, 1989, 54 (25) :2577-2579
[5]  
DHUERLE F, 1970, APPL PHYS REV LETT, V16, P80
[6]  
KAUR I, 1989, HDB GRAIN INTERPHASE, P118
[7]  
KAUR I, 1989, FUNDAMENTALS GRAIN I, P275
[8]   TEXTURE ANALYSIS OF AL/SIO2 FILMS DEPOSITED BY A PARTIALLY IONIZED BEAM [J].
KNORR, DB ;
LU, TM .
APPLIED PHYSICS LETTERS, 1989, 54 (22) :2210-2212
[9]  
KNORR DB, 1991, APR MRS SPRING M
[10]  
KNORR DB, IN PRESS MRS P SERIE, V225