GRAIN-SIZE DEPENDENCE OF ELECTROMIGRATION-INDUCED FAILURES IN NARROW INTERCONNECTS

[1] DEPENDENCE OF ELECTROMIGRATION-INDUCED FAILURE TIME ON LENGTH AND WIDTH OF ALUMINUM THIN-FILM CONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 3954 - &

[2] ELECTROMIGRATION DAMAGE IN ALUMINUM FILM CONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2381 - +

[3] STATISTICAL METALLURGICAL MODEL FOR ELECTROMIGRATION FAILURE IN ALUMINUM THIN-FILM CCNDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4343 - &

[4] ANOMALOUS LARGE GRAINS IN ALLOYED ALUMINUM THIN-FILMS .1. SECONDARY GRAIN-GROWTH IN ALUMINUM-COPPER FILMS [J]. THIN SOLID FILMS, 1972, 12 (02) : 399 - &

[5] A MODEL FOR THE WIDTH DEPENDENCE OF ELECTROMIGRATION LIFETIMES IN ALUMINUM THIN-FILM STRIPES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 968 - 970

[6] LaCombe D. J., 1986, 24th Annual Proceedings Reliability Physics 1986 (Cat. No.86CH2256-6), P1, DOI 10.1109/IRPS.1986.362103

[7] NEW TECHNIQUE AND ANALYSIS OF ACCELERATED ELECTROMIGRATION LIFE TESTING IN MULTILEVEL METALLIZATIONS [J]. APPLIED PHYSICS LETTERS, 1988, 53 (15) : 1414 - 1416

[8] A NEW ELECTROMIGRATION TESTING TECHNIQUE FOR RAPID STATISTICAL EVALUATION OF INTERCONNECT TECHNOLOGY [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 667 - 668

[9] THOMPSON CV, 1986, 18TH INT C SOL STAT, P491

[10] LINEWIDTH DEPENDENCE OF ELECTROMIGRATION IN EVAPORATED AL-0.5-PERCENT CU [J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 464 - 466

[1] DEPENDENCE OF ELECTROMIGRATION-INDUCED FAILURE TIME ON LENGTH AND WIDTH OF ALUMINUM THIN-FILM CONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 3954 - &

[2] ELECTROMIGRATION DAMAGE IN ALUMINUM FILM CONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2381 - +

[3] STATISTICAL METALLURGICAL MODEL FOR ELECTROMIGRATION FAILURE IN ALUMINUM THIN-FILM CCNDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4343 - &

[4] ANOMALOUS LARGE GRAINS IN ALLOYED ALUMINUM THIN-FILMS .1. SECONDARY GRAIN-GROWTH IN ALUMINUM-COPPER FILMS [J]. THIN SOLID FILMS, 1972, 12 (02) : 399 - &

[5] A MODEL FOR THE WIDTH DEPENDENCE OF ELECTROMIGRATION LIFETIMES IN ALUMINUM THIN-FILM STRIPES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 968 - 970

[6] LaCombe D. J., 1986, 24th Annual Proceedings Reliability Physics 1986 (Cat. No.86CH2256-6), P1, DOI 10.1109/IRPS.1986.362103

[7] NEW TECHNIQUE AND ANALYSIS OF ACCELERATED ELECTROMIGRATION LIFE TESTING IN MULTILEVEL METALLIZATIONS [J]. APPLIED PHYSICS LETTERS, 1988, 53 (15) : 1414 - 1416

[8] A NEW ELECTROMIGRATION TESTING TECHNIQUE FOR RAPID STATISTICAL EVALUATION OF INTERCONNECT TECHNOLOGY [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 667 - 668

[9] THOMPSON CV, 1986, 18TH INT C SOL STAT, P491

[10] LINEWIDTH DEPENDENCE OF ELECTROMIGRATION IN EVAPORATED AL-0.5-PERCENT CU [J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 464 - 466