SEM/EBIC investigations of extended defect system in GaN epilayers

被引：13

作者：

Shmidt, NM ^{[1
]}

Sirotkin, VV ^{[1
]}

Sitnikova, AA ^{[1
]}

Soltanovich, OA ^{[1
]}

Zolotareva, RV ^{[1
]}

Yakimov, EB ^{[1
]}

机构：

[1] RAS, AF Ioffe Physicotech Inst, St Petersburg, Russia

来源：

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 6 | 2005年 / 2卷 / 06期

关键词：

D O I：

10.1002/pssc.200460506

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The EBIC investigations of extended defect system in GaN epitaxial layers with different electron mobility and dislocation density have been carried out. The recombination strength and defect cylinder radius for threading dislocations have been estimated from their EBIC profiles. Some cellular structure is revealed in the samples with the less-ordered mosaic structure that could be associated with the enhanced recombination activity of domain boundaries in such layers.

引用

页码：1797 / 1801

页数：5

共 18 条

[1]

Albrecht M, 1999, PHYS STATUS SOLIDI B, V216, P409, DOI 10.1002/(SICI)1521-3951(199911)216:1<409::AID-PSSB409>3.0.CO

[2]

2-K

[3] Peculiarities of extended defect system in III-nitrides with different degrees of order of mosaic structure [J].