Reactively DC magnetron sputtered thin AlN films studied by x-ray photoelectron spectroscopy and polarised infrared reflection

被引：20

作者：

Manova, D

Dimitrova, V

Karpuzov, D

Yankov, R

机构：

[1] Univ Rousse, Dept Phys, Rousse 7017, Bulgaria

[2] Bulgarian Acad Sci, Inst Elect, BU-1784 Sofia, Bulgaria

[3] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ionenphys & Mat Forsch, D-01314 Dresden, Germany

来源：

VACUUM | 1999年 / 52卷 / 03期

关键词：

D O I：

10.1016/S0042-207X(98)00303-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aluminium nitride thin films were deposited by reactive d.c. magnetron sputtering on various substrates. The analytical tools used to characterise the aluminium nitride thin films were electron beam diffraction, X-ray photoelectron spectroscopy, energy dispersive X-ray analysis and polarised infrared reflection. From these techniques the structure, microstructure, chemical state, percentage content of the elements and IR properties of the films were observed and the formation of the AlN compound was confirmed. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：301 / 305

页数：5

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