HYDROGENATED ALUMINUM NITRIDE THIN-FILMS PREPARED BY RF REACTIVE SPUTTERING - INFRARED AND STRUCTURAL-PROPERTIES

Hydrogenated aluminum nitride thin films, AIN:H, were successfully deposited by radio-frequency reactive sputtering of an aluminum target under an argon-ammonia gas mixture. In-situ control of the nitrogen species was performed by emission spectroscopy. Optical spectroscopy of the gas phase revealed that growth processes depend on target nitriding. Specular reflectance Fourier transform infrared (FTIR) spectroscopy showed the evolution of AIN longitudinal and transverse optical modes as a function of temperature synthesis, film thickness and angle of incidence. A structural study was carried out by transmission electron microscopy and X-ray diffraction. FTIR and secondary ion mass spectrometry analyses showed that for samples exposed to room atmosphere, AIN:H reacts with air moisture, leading to the formation of a superficial layer of aluminum hydroxide Al(OH)(3).