LASER DEPOSITION OF AIN THIN-FILMS ON INP AND GAAS

被引:21
作者
BHATTACHARYA, P
BOSE, DN
机构
[1] Semiconductor Division, Materials Science Centre, Indian Institute of Technology, Kharagpur
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 10A期
关键词
LASER DEPOSITION; AIN FILMS; COMPOUND SEMICONDUCTOR; MIS DIODES; INTERFACE STATES;
D O I
10.1143/JJAP.30.L1750
中图分类号
O59 [应用物理学];
学科分类号
摘要
Aluminium nitride thin films (approximately 1000 angstrom) were deposited by pulsed laser (ruby, 30 ns) evaporation on compound semiconductors GaAs and InP for fabrication of metal-insulator-semiconductor (MIS) diodes. The deposition was carried out with a laser energy density of 2.5 J.cm-2 at a rate of 10-11 angstrom/pulse at approximately 10(-6) Torr, the substrate temperature being 300 K. Low-angle X-ray diffraction showed the films to have a wurtzite structure. The resistivity of the films was 5 x 10(12) OMEGA-cm with a breakdown field of 1-2 x 10(6) V-cm. The dielectric constant of the films was in the range of 7.5-7.8. A lower value of interface state density was obtained on InP (approximately 1.8 x 10(11) cm-2.eV-1) rather than on GaAs (approximately 8 x 10(11) cm-2.eV-1). These results are compared with earlier studies of laser-deposited BN films on InP.
引用
收藏
页码:L1750 / L1752
页数:3
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