Femtosecond holographic interferometry for studies of semiconductor ablation using vanadium dioxide film

被引:41
作者
Bugayev, AA [1 ]
Gupta, MC [1 ]
机构
[1] Old Dominion Univ, Appl Res Ctr, Newport News, VA 23606 USA
关键词
D O I
10.1364/OL.28.001463
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A recording medium based on the phenomenon of phase transition from semiconductor to metal is applied to holography in the femtosecond time domain. The results of holographic interferometry studies of semiconductor ablation are presented. (C) 2003 Optical Society of America.
引用
收藏
页码:1463 / 1465
页数:3
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