NONLINEAR REFRACTIVE-INDEX OF SILICON AND GAAS INDUCED BY FREE-CARRIER GENERATION

被引：7

作者：

BUGAYEV, AA

机构：

[1] A. F. Ioffe Physical-Technical Institute, Academy of Sciences of the USSR, Leningrad

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1990年 / 22卷 / 06期

关键词：

D O I：

10.1007/BF02189499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The practicality is demonstrated of two-exposure picosecond holographic interferometry to study the real part of the non-linear susceptibility of semiconductors resulting from free-carrier generation. The interference patterns are recorded in the near IR spectral range and no special treatment of the sample is required. Good correspondence is established of the data obtained to the model of plasma-induced refractive index (Drude relationship). © 1990 Chapman and Hall Ltd.

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页码：485 / 489

页数：5

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