NONLINEAR REFRACTION IN SILICON INDUCED BY ONE-MICRON PICOSECOND PULSES

被引：13

作者：

BOGGESS, TF ^{[1
]}

BOHNERT, K ^{[1
]}

NORWOOD, DP ^{[1
]}

MIRE, CD ^{[1
]}

SMIRL, AL ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

OPTICS COMMUNICATIONS | 1987年 / 64卷 / 04期

关键词：

This researchw as supported by the U.S. Office of Naval Research and The Robert A. Welch Foundation;

D O I：

10.1016/0030-4018(87)90257-4

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：387 / 392

页数：6

共 21 条

[1] SIMULTANEOUS MEASUREMENT OF THE 2-PHOTON COEFFICIENT AND FREE-CARRIER CROSS-SECTION ABOVE THE BANDGAP OF CRYSTALLINE SILICON
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[3] OPTICAL TUNING OF A SILICON FABRY-PEROT-INTERFEROMETER BY A PULSED 1.06 MU-M LASER
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[5] SELF-DEFOCUSING AND SELF-PHASE MODULATION IN INSB MEASURED WITH PICOSECOND INFRARED PULSES
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[6] GASKILL JD, 1978, LINEAR SYSTEMS FOURI, P349
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[9] NON-LINEAR REFRACTIVE-INDEX CHANGES IN CDHGTE AT 175 K WITH 10.6-MU-M RADIATION
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[J]. OPTICS COMMUNICATIONS, 1982, 43 (02) : 151 - 156
[10] DEGENERATE 4-WAVE MIXING NEAR THE BAND-GAP OF SEMICONDUCTORS
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