Mn-rich clusters in GaN:: Hexagonal or cubic symmetry? -: art. no. 131927

被引:51
作者
Martínez-Criado, G
Somogyi, A
Ramos, S
Campo, J
Tucoulou, R
Salome, M
Susini, J
Hermann, M
Eickhoff, M
Stutzmann, M
机构
[1] European Synchrotron Radiat Facil, Expt Div, F-38043 Grenoble, France
[2] Univ Zaragoza, Inst Sci Mat, E-50009 Zaragoza, Spain
[3] Tech Univ Munich, European Synchrotron Radiat Facil, D-85748 Garching, Germany
关键词
D O I
10.1063/1.1886908
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this study, we report the application of synchrotron radiation microprobe to the analysis of Mn-rich clusters in GaN. From the Mn and Ga fluorescence line intensity ratio, an average Mn concentration of 11% was deduced. A combination of fluorescence mapping with spectroscopic techniques enabled us to examine not only the cluster elemental nature but also their crystallographic orientation on the submicron scale. The strong polarization-dependent x-ray absorption near-edge structure features showed the preservation of the hexagonal symmetry in both cluster-free and Mn-rich regions. However, from the x-ray absorption data taken inside the clusters, a preferential disorder was observed in the direction parallel to, the crystal growth rather than perpendicular to it. (C) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
相关论文
共 20 条
[1]   Effects of disorder on ferromagnetism in diluted magnetic semiconductors [J].
Berciu, M ;
Bhatt, RN .
PHYSICAL REVIEW LETTERS, 2001, 87 (10) :1-107203
[2]   MBE growth of GaMnN diluted magnetic semiconductors and its magnetic properties [J].
Chen, PP ;
Makino, H ;
Kim, JJ ;
Yao, T .
JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :331-336
[3]   Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H-SiC(0001) by reactive molecular-beam epitaxy [J].
Dhar, S ;
Brandt, O ;
Trampert, A ;
Däweritz, L ;
Friedland, KJ ;
Ploog, KH ;
Keller, J ;
Beschoten, B ;
Güntherodt, G .
APPLIED PHYSICS LETTERS, 2003, 82 (13) :2077-2079
[4]   Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F ;
Cibert, J ;
Ferrand, D .
SCIENCE, 2000, 287 (5455) :1019-1022
[5]   Ferromagnetic interactions in doped semiconductors and their nanostructures (invited) [J].
Dietl, T .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :7437-7442
[6]   Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F .
PHYSICAL REVIEW B, 2001, 63 (19)
[7]   Growth and characterization of GaN:Mn epitaxial films [J].
Graf, T ;
Gjukic, M ;
Hermann, M ;
Brandt, MS ;
Stutzmann, M ;
Görgens, L ;
Philipp, JB ;
Ambacher, O .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (12) :9697-9702
[8]   Formation of an X-ray microbeam using a Schwarzschild X-ray objective [J].
Iketaki, Y ;
Horikawa, Y ;
Mochimaru, S ;
Nagai, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (08) :4585-4586
[9]   Experimental determination of the N-p-partial density of states in the conduction band of GaN: Determination of the polytype fractions in mixed phase samples [J].
Katsikini, M ;
Paloura, EC ;
Moustakas, TD .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (03) :1437-1445
[10]   Nitrogen K-edge X-ray absorption measurements on N- and O-implanted GaN [J].
Katsikini, M ;
Paloura, EC ;
Bollmann, J ;
Holub-Krappe, E ;
Masselink, WT .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1999, 101 :689-694