MBE growth of GaMnN diluted magnetic semiconductors and its magnetic properties

被引：47

作者：

Chen, PP ^{[1
]}

Makino, H ^{[1
]}

Kim, JJ ^{[1
]}

Yao, T ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

molecular beam epitaxy; nitrides; magnetic materials;

D O I：

10.1016/S0022-0248(02)02204-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Single phase Ga1-xMnxN diluted magnetic semiconductors films were grown by RF-plasma-assisted molecular beam epitaxy. The films exhibit n-type conduction determined by Hall measurement. SQUID measurement shows the coexistence of ferromagnetic and paramagnetic phases of the GaMnN films. The Curie temperature of low Mn doping Ga1-xMnxN (x = 0.01) is higher than room temperature (300K). For the high Mn doping film, the Ga1-xMnxN (x = 0.04) epilayers show primarily paramagnetic behavior, while a ferromagnetic contribution is present up to 200 K. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：331 / 336

页数：6

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