Influence of inserting a thin fullerene layer on pentacene organic thin-film transistor

被引:5
作者
Li, Yu-Chang [1 ]
Lin, Yu-Ju [1 ]
Wei, Chia-Yu [2 ]
Chou, Dei-Wei [3 ]
Tsao, Chun-Ho [1 ]
Wang, Yeong-Her [1 ]
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 701, Taiwan
[3] Air Force Inst Technol, Dept Aviat & Commun Elect, Kaohsiung 820, Taiwan
关键词
X ray diffraction - Atomic force microscopy - Thin film circuits - Thin films - Field effect transistors - Hole mobility;
D O I
10.1063/1.3693176
中图分类号
O59 [应用物理学];
学科分类号
摘要
The performance of organic thin-film transistors (TFTs) with a pentacene/fullerene(C-60)/pentacene (PCP) sandwich structure is presented. Using a 3.5 nn-thick C-60 layer inserted between the pentacene films, the obtained hole mobility is improved by more than six times. By applying atomic force microscopy, x-ray diffraction, Raman spectrum, and transmission line method analysis, one can reasonably infer that the smoother surface of the pentacene film covered with thin C-60 layer delays the phase transformation of the upper pentacene film, resulting in stronger intermolecular coupling and the reduction of channel resistance of the PCP TFTs from 3.03 to 1.72 M Omega, and, therefore, improving the device performance. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3693176]
引用
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页数:4
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