The effects of chemical doping with F4TCNQ in carbon nanotube field-effect transistors studied by the transmission-line-model technique

被引：53

作者：

Nosho, Y. ^{[1
]}

Ohno, Y.

Kishimoto, S.

Mizutani, T.

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 464, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama, Japan

[3] Nagoya Univ, Venture Business Lab, Chikusa Ku, Nagoya, Aichi 464, Japan

[4] Nagoya Univ, Inst Adv Res, Nagoya, Aichi, Japan

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 41期

关键词：

D O I：

10.1088/0957-4484/18/41/415202

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied the effects of p-type chemical doping with F(4)TCNQ (tetrafluorotetracyano-p-quinodimethane) in carbon nanotube field-effect transistors (CNFETs). The transmission-line-model technique using multi-probe CNFETs has been employed to investigate the effects of chemical doping on the channel resistance and contact resistance. It has been found that chemical doping is effective in the reduction of the contact resistance as well as the channel resistance. The device performances of top-gate CNFETs such as transconductance, on-resistance, and on/ off ratio were improved by the F(4)TCNQ chemical doping on the access regions.

引用

页数：4

共 22 条

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J].

BERGER, HH .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&

[2] COMPARISON OF EXPERIMENTAL DETERMINATIONS OF ELECTRON AFFINITIES OF PI CHARGE-TRANSFER COMPLEX ACCEPTORS [J].

CHEN, ECM ;

WENTWORTH, WE .

JOURNAL OF CHEMICAL PHYSICS, 1975, 63 (08) :3183-3191

[3] The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors [J].

Chen, ZH ;

Appenzeller, J ;

Knoch, J ;

Lin, YM ;

Avouris, P .

NANO LETTERS, 2005, 5 (07) :1497-1502

[4] Controlling energy-level alignments at carbon nanotube/Au contacts [J].

Cui, XD ;

Freitag, M ;

Martel, R ;

Brus, L ;

Avouris, P .

NANO LETTERS, 2003, 3 (06) :783-787

[5] Carbon nanotube inter- and intramolecular logic gates [J].

Derycke, V ;

Martel, R ;

Appenzeller, J ;

Avouris, P .

NANO LETTERS, 2001, 1 (09) :453-456

[6]

Dresselhaus MS, 2001, CARBON NANOTUBES SYN

[7] Controlled p doping of the hole-transport molecular material N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine with tetrafluorotetracyanoquinodimethane [J].

Gao, WY ;

Kahn, A .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (01) :359-366

[8] Carbon nanotubes as Schottky barrier transistors [J].

Heinze, S ;

Tersoff, J ;

Martel, R ;

Derycke, V ;

Appenzeller, J ;

Avouris, P .

PHYSICAL REVIEW LETTERS, 2002, 89 (10)

[9]

Ishii H, 1999, ADV MATER, V11, P605, DOI 10.1002/(SICI)1521-4095(199906)11:8<605::AID-ADMA605>3.0.CO

[10]

2-Q

← 1 2 3 →