Internal quantum efficiency of highly-efficient InxGa1-xN-based near-ultraviolet light-emitting diodes

被引：283

作者：

Watanabe, S

Yamada, N

Nagashima, M

Ueki, Y

Sasaki, C

Yamada, Y

Taguchi, T

Tadatomo, K

Okagawa, H

Kudo, H

机构：

[1] Agilent Technol, Tokyo 1928510, Japan

[2] Yamaguchi Univ, Fac Engn, Yamaguchi 7558611, Japan

[3] Mitsubishi Cable Ind Ltd, Photon Res Lab, Itami, Hyogo 6640027, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 24期

关键词：

D O I：

10.1063/1.1633672

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The internal quantum efficiency (IQE) of highly-efficient near-UV light-emitting diodes, which shows an external quantum efficiency of 43% at 406 nm, has been measured by excitation power and temperature-dependent photoluminescence (PL). Assuming peak PL quantum efficiency at 8 K is 100%, peak IQE at 300 K was measured to be as high as 63%. At the injected carrier density, which corresponds to 20 mA current injection, IQE and light extraction efficiency were estimated to be about 54% and 80%, respectively. (C) 2003 American Institute of Physics.

引用

页码：4906 / 4908

页数：3

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