Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells

被引:1081
作者
Takeuchi, T
Sota, S
Katsuragawa, M
Komori, M
Takeuchi, H
Amano, H
Akasaki, I
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 4A期
关键词
GaInN; strained quantum well; (0001) orientation; piezoelectric effect; quantum-confined Stark effect;
D O I
10.1143/JJAP.36.L382
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells. Our calculation suggests that an electric field of 1.08 MV/cm is induced by the piezoelectric effect in strained Ga0.87In0.13N grown on GaN. The photoluminescence peak energy of the Ga0.87In0.13N strained quantum wells showed blue shift with increasing excitation intensity. Moreover, the well-width dependence of its luminescence peak energy was well explained when the piezoelectric fields were taken into account. These results clearly showed that the piezoelectric field induced the quantum-confined Stark effect.
引用
收藏
页码:L382 / L385
页数:4
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