NEW APPROACH IN EQUILIBRIUM-THEORY FOR STRAINED-LAYER RELAXATION

被引:198
作者
FISCHER, A
KUHNE, H
RICHTER, H
机构
[1] Institute of Semiconductor Physics, 15230 Frankfurt (Oder)
关键词
D O I
10.1103/PhysRevLett.73.2712
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present a new approach in equilibrium theory for strain relaxation in metastable heteroepitaxial semiconductor structures, one which includes the elastic interaction between straight misfit dislocations. The free-surface boundary conditions are satisfied by placing an "image dislocation" outside the crystal in such a manner that its stress field cancels that of the real misfit dislocation at the surface. This image method provides an equilibrium theory which correctly predicts critical strained layer thicknesses and completely describes the strain relief via plastic flow in lattice mismatched epilayers. © 1994 The American Physical Society.
引用
收藏
页码:2712 / 2715
页数:4
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