Hydride vapor-phase epitaxy growth of high-quality GaN bulk single crystal by epitaxial lateral overgrowth

Selective area growth (SAG) of GaN using the HVPE method was carried out to obtain a high-quality GaN bulk single crystal. Selectivity of the GaN growth was excellent and the GaN layer had no cracks. The FWHM (195 arcsec) of the X-ray rocking curve for (0 0 0 4) diffraction was narrower than that (348 arcsec) of uhe sample grown by the conventional method. Overgrowth of the GaN on the SiO2 mask was enhanced in the [1 1 (2) over bar 0] direction. Cathode luminescence intensity of this overgrowth region was much stronger than that of the window region. It was found that a reduction in stress is achieved by narrowing the window area, and the epitaxial lateral overgrowth on the mask is effective in obtaining high-quality GaN layer. (C) 1998 Elsevier Science B.V. All rights reserved.