Hydrogen termination following Cu deposition on Si(001)

被引:8
作者
Baker, LA [1 ]
Laracuente, AR [1 ]
Whitman, LJ [1 ]
机构
[1] USN, Res Lab, Washington, DC 20375 USA
关键词
D O I
10.1103/PhysRevB.71.153302
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We describe the surface structures following submonolayer Cu deposition on Si(001) and subsequent hydrogen termination as characterized by scanning tunneling microscopy. Cu adsorption at 870 K results in a characteristic (2x8) island+vacancy structure, as previously reported. In addition, occasional structures are observed attributed to Cu in surface interstitial sites. After H termination, the dominant features of the island+vacancy structure remain, but the size and distribution of the structures are significantly altered. Based on the atomic-scale appearance of both the clean and H-terminated structures, we propose that within the (2x8) island+vacancy structure all surface atoms are Si, with all Cu subsurface, contrary to previous structural models.
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页数:4
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