INVESTIGATION OF THE SI(100)2X1/CU INTERFACE BY UPS AND SURFACE REFLECTANCE SPECTROSCOPY

被引：7

作者：

GUILLET, S ^{[1
]}

REGALADO, LE ^{[1
]}

LOPEZRIOS, T ^{[1
]}

CINTI, R ^{[1
]}

机构：

[1] UNIV SONORA,INST PHYS,HERMOSILLO 83190,SONORA,MEXICO

来源：

APPLIED SURFACE SCIENCE | 1993年 / 65-6卷

关键词：

D O I：

10.1016/0169-4332(93)90748-Z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electronic properties of Cu deposited on Si(100)2 x 1 surfaces at room temperature were investigated by photoemission and surface reflectance spectroscopy. We have succeeded in observing the optical response of the inner layers for consecutive Cu deposits and present evidence for changes of the sp band in the interface region.

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页码：742 / 745

页数：4

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