CHARACTERIZATION OF CU/SI(100) INTERFACES BY DIFFERENT SURFACE-SENSITIVE TECHNIQUES

被引：21

作者：

MATHIEZ, P ^{[1
]}

DAUGY, E ^{[1
]}

SALVAN, F ^{[1
]}

METOIS, JJ ^{[1
]}

HANBUCKEN, M ^{[1
]}

机构：

[1] CNRS,CTR RECH MECANISMES CROISSANCE 2,F-13288 MARSEILLE 9,FRANCE

来源：

SURFACE SCIENCE | 1986年 / 168卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90846-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：158 / 163

页数：6

共 10 条

[1] PHOTOEMISSION INVESTIGATION OF SI(111)-CU INTERFACES [J].

ABBATI, I ;

GRIONI, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :631-635

[2] CHARACTERIZATION OF INTERMIXING AT METAL-SEMICONDUCTOR INTERFACES BY ANGLE-RESOLVED AUGER-ELECTRON EMISSION - CU/SI(111)-7X7 [J].

CHAMBERS, SA ;

HOWELL, GA ;

GREENLEE, TR ;

WEAVER, JH .

PHYSICAL REVIEW B, 1985, 31 (10) :6402-6410

[3] 7X7 SI(111)-CU INTERFACES - COMBINED LEED, AES AND EELS MEASUREMENTS [J].

DAUGY, E ;

MATHIEZ, P ;

SALVAN, F ;

LAYET, JM .

SURFACE SCIENCE, 1985, 154 (01) :267-283

[4] COMBINED AES, LEED, SEM AND TEM CHARACTERIZATIONS OF CU-SI(100) INTERFACES [J].

HANBUCKEN, M ;

METOIS, JJ ;

MATHIEZ, P ;

SALVAN, F .

SURFACE SCIENCE, 1985, 162 (1-3) :622-627

[5] SIMILARITIES IN CHEMICAL INTERMIXING AT THE CU/INP AND CU/SI INTERFACES [J].

KENDELEWICZ, T ;

ROSSI, G ;

PETRO, WG ;

BABALOLA, IA ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :564-569

[6] FORMATION AND PROPERTIES OF THE COPPER SILICON (111) INTERFACE [J].

RINGEISEN, F ;

DERRIEN, J ;

DAUGY, E ;

LAYET, JM ;

MATHIEZ, P ;

SALVAN, F .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :546-552

[7] COMPOUND FORMATION AND BONDING CONFIGURATION AT THE SI-CU INTERFACE [J].

ROSSI, G ;

LINDAU, I .

PHYSICAL REVIEW B, 1983, 28 (06) :3597-3600

[8] THE SI(111)/CU INTERFACE STUDIED WITH SURFACE SENSITIVE TECHNIQUES [J].

ROSSI, G ;

KENDELEWICZ, T ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :987-990

[9] SURFACE-STATE TRANSITIONS OF SILICON IN ELECTRON ENERGY-LOSS SPECTRA [J].

ROWE, JE ;

IBACH, H .

PHYSICAL REVIEW LETTERS, 1973, 31 (02) :102-105

[10] EFFECT OF CU DEPOSITION ON STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) SURFACES [J].

TALEBIBRAHIMI, A ;

MERCIER, V ;

SEBENNE, CA ;

BOLMONT, D ;

CHEN, P .

SURFACE SCIENCE, 1985, 152 (APR) :1228-1238

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