共 15 条
[1]
PHOTOEMISSION INVESTIGATION OF SI(111)-CU INTERFACES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1981, 19 (03)
:631-635
[2]
ELECTRONIC-PROPERTIES OF METAL-RICH AU SI COMPOUNDS AND INTERFACES
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1982, 15 (22)
:4707-4716
[3]
STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG
[J].
PHYSICAL REVIEW B,
1981, 24 (08)
:4552-4559
[5]
SCHOTTKY-BARRIER FORMATION .1. ABRUPT METAL-SEMICONDUCTOR JUNCTIONS
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1983, 16 (33)
:6499-6512
[7]
ANGLE-RESOLVED PHOTOEMISSION OF THE INITIAL-STAGES OF AU GROWTH ON SI(111) 7X7
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1982, 15 (34)
:7065-7072
[9]
LOW-ENERGY ELECTRON-LOSS SPECTROSCOPY AND AUGER-ELECTRON-SPECTROSCOPY STUDIES OF NOBLE-METAL SILICON INTERFACES - SI-AU SYSTEM
[J].
PHYSICAL REVIEW B,
1982, 26 (03)
:1125-1138
[10]
FORMATION AND PROPERTIES OF THE COPPER SILICON (111) INTERFACE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1983, 1 (03)
:546-552