COMPOUND FORMATION AND BONDING CONFIGURATION AT THE SI-CU INTERFACE

被引:66
作者
ROSSI, G
LINDAU, I
机构
来源
PHYSICAL REVIEW B | 1983年 / 28卷 / 06期
关键词
D O I
10.1103/PhysRevB.28.3597
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3597 / 3600
页数:4
相关论文
共 23 条
[1]   COPPER ON NI(111) - THE ELECTRON-STATES FROM SUBMONOLAYER TO SEVERAL-MONOLAYER COVERAGES [J].
ABBATI, I ;
BRAICOVICH, L ;
FASANA, A ;
BERTONI, CM ;
MANGHI, F ;
CALANDRA, C .
PHYSICAL REVIEW B, 1981, 23 (12) :6448-6455
[2]   PHOTOEMISSION INVESTIGATION OF SI(111)-CU INTERFACES [J].
ABBATI, I ;
GRIONI, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :631-635
[3]   ELECTRONIC-STRUCTURE OF AN ORDERED MONOLAYER OF CU ON ZN(0001) [J].
ABBATI, I ;
BRAICOVICH, L ;
BERTONI, CM ;
CALANDRA, C ;
MANGHI, F .
PHYSICAL REVIEW LETTERS, 1978, 40 (07) :469-472
[4]   TRANSITION-METAL SILICIDES - ASPECTS OF THE CHEMICAL-BOND AND TRENDS IN THE ELECTRONIC-STRUCTURE [J].
BISI, O ;
CALANDRA, C .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (35) :5479-5494
[5]   ELECTRONIC-PROPERTIES OF METAL-RICH AU SI COMPOUNDS AND INTERFACES [J].
BISI, O ;
CALANDRA, C ;
BRAICOVICH, L ;
ABBATI, I ;
ROSSI, G ;
LINDAU, I ;
SPICER, WE .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (22) :4707-4716
[6]   PHOTOEMISSION-STUDIES OF THE SILICON GOLD INTERFACE [J].
BRAICOVICH, L ;
GARNER, CM ;
SKEATH, PR ;
SU, CY ;
CHYE, PW ;
LINDAU, I ;
SPICER, WE .
PHYSICAL REVIEW B, 1979, 20 (12) :5131-5141
[7]   TIGHT-BINDING CALCULATION OF A CORE-VALENCE VALENCE AUGER LINE-SHAPE - SI(111) [J].
FEIBELMAN, PJ ;
MCGUIRE, EJ ;
PANDEY, KC .
PHYSICAL REVIEW LETTERS, 1976, 36 (19) :1154-1157
[8]   CHEMICAL BONDING AT THE SI-METAL INTERFACE - SI-NI AND SI-CR [J].
FRANCIOSI, A ;
WEAVER, JH ;
ONEILL, DG ;
CHABAL, Y ;
ROWE, JE ;
POATE, JM ;
BISI, O ;
CALANDRA, C .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :624-627
[9]   PHOTO-IONIZATION CROSS-SECTIONS FOR ATOMIC ORBITALS WITH RANDOM AND FIXED SPATIAL ORIENTATION [J].
GOLDBERG, SM ;
FADLEY, CS ;
KONO, S .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1981, 21 (04) :285-363
[10]   METAL-SILICON INTERFACE FORMATION - THE NI-SI AND PD-SI SYSTEMS [J].
GRUNTHANER, PJ ;
GRUNTHANER, FJ ;
MADHUKAR, A ;
MAYER, JW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :649-656