Copper-related defects in silicon: Electron-paramagnetic-resonance identification

被引:15
作者
Hai, PN [1 ]
Gregorkiewicz, T [1 ]
Ammerlaan, CAJ [1 ]
Don, DT [1 ]
机构
[1] NATL UNIV HANOI,FAC PHYS,HANOI,VIETNAM
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 08期
关键词
D O I
10.1103/PhysRevB.56.4620
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper the observation of two electron-paramagnetic-resonance spectra, both present in p-type silicon samples after doping with silver, is reported. The two centers show a symmetry lower than cubic and have an effective electron spin S=1/2. In view of the detected hyperfine interaction with nuclear spins I=3/2, the spectra are shown to be related to a contaminant introduced into the samples during the diffusion process. By analysis of the features of the spectrum and the defect formation, a spectrum of the tetragonal symmetry, labeled Si-NL58, is identified as a copper-copper pair in a negatively charged state. The second spectrum,labeled Si-NL59, is attributed to a complex containing one copper atom.
引用
收藏
页码:4620 / 4625
页数:6
相关论文
共 29 条
  • [1] COPPER PASSIVATION OF BORON IN SILICON AND BORON REACTIVATION KINETICS
    ABOELFOTOH, MO
    SVENSSON, BG
    [J]. PHYSICAL REVIEW B, 1991, 44 (23): : 12742 - 12747
  • [2] MAGNETIC-RESONANCE SPECTROSCOPY OF ZINC DOPED SILICON
    ALTINK, HE
    GREGORKIEWICZ, T
    AMMERLAAN, CAJ
    [J]. SOLID STATE COMMUNICATIONS, 1990, 75 (02) : 115 - 120
  • [3] ON THE DIFFUSION OF CO IN SI AND ITS APPLICABILITY TO THE SI INTRINSIC DEFECT PROBLEM
    BERGHOLZ, W
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (06) : 1099 - &
  • [4] DEEP LEVELS OF COPPER IN SILICON
    BROTHERTON, SD
    AYRES, JR
    GILL, A
    VANKESTEREN, HW
    GREIDANUS, FJAM
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) : 1826 - 1832
  • [5] DECOTEAU MD, 1992, MATER SCI FORUM, V83, P185, DOI 10.4028/www.scientific.net/MSF.83-87.185
  • [6] ELECTRON-SPIN-RESONANCE INVESTIGATION OF MNCU PAIRS IN SILICON
    DIETRICH, H
    VOLLMER, H
    LABUSCH, R
    [J]. SOLID STATE COMMUNICATIONS, 1986, 58 (11) : 811 - 813
  • [7] DUARTE AJ, 1997, SHALLOW LEVEL CTRS S, P351
  • [8] CORRELATION BETWEEN THE CU-RELATED LUMINESCENT CENTER AND A DEEP-LEVEL IN SILICON
    ERZGRABER, HB
    SCHMALZ, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) : 4066 - 4068
  • [9] COPPER, LITHIUM, AND HYDROGEN PASSIVATION OF BORON IN C-SI
    ESTREICHER, SK
    [J]. PHYSICAL REVIEW B, 1990, 41 (08): : 5447 - 5450
  • [10] ELECTRONIC-STRUCTURE OF COPPER, SILVER, AND GOLD IMPURITIES IN SILICON
    FAZZIO, A
    CALDAS, MJ
    ZUNGER, A
    [J]. PHYSICAL REVIEW B, 1985, 32 (02): : 934 - 954