Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers

被引:26
作者
Luo, KJ [1 ]
Xu, JY
Cao, H
Ma, Y
Chang, SH
Ho, ST
Solomon, GS
机构
[1] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
[2] Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA
[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
关键词
D O I
10.1063/1.1376437
中图分类号
O59 [应用物理学];
学科分类号
摘要
The dynamical response of InAs/GaAs quantum-dot microdisk lasers has been experimentally investigated using femtosecond optical pumping. Because surface recombination and carrier diffusion are suppressed in the quantum dots, the response speed of a quantum-dot microdisk laser is much faster than that of a quantum-well microdisk laser. A turn-on time as short as 7.8 ps has been achieved in a quantum-dot microdisk laser at 5 K. The temperature dependence of the dynamical response of the quantum-dot microdisk lasers has also been studied over a wide temperature range. At the same pumping level, the turn-on time of the laser decreases as the temperature increases from 5 to 120 K. Such behavior may be due to a faster carrier relaxation process at higher temperature. (C) 2001 American Institute of Physics.
引用
收藏
页码:3397 / 3399
页数:3
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