Deposition of transition metal carbide superlattices using C60 as a carbon source

被引：10

作者：

Norin, L

Hogberg, H

Lu, J

Jansson, U ^{[1
]}

Malm, JO

机构：

[1] Univ Uppsala, Dept Inorgan Chem, Angstrom Lab, S-75121 Uppsala, Sweden

[2] Univ Lund, Natl Ctr HREM, Dept Inorgan Chem 2, S-22100 Lund, Sweden

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 19期

关键词：

D O I：

10.1063/1.122580

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial films of TiC and VC can be deposited at low temperatures on Mg(001) substrates by coevaporation of the metals with C-60 in a ultrahigh vacuum system. This process was used to deposit TiC/VC (001) superlattices on MgO(001) at 400 degrees C. The superlattice structure was characterized with low electron energy diffraction, x-ray diffraction, and transmission electron microscopy (TEM). Cross-sectional high-resolution TEM showed good registry between the different carbide layers. (C) 1998 American Institute of Physics. [S0003-6951(98)00944-9].

引用

页码：2754 / 2756

页数：3

共 7 条

[1] GROWTH OF SINGLE-CRYSTAL TIN VN STRAINED-LAYER SUPERLATTICES WITH EXTREMELY HIGH MECHANICAL HARDNESS [J].