Low temperature deposition of epitaxial titanium carbide on MgO(001) by co-evaporation of C-60 and Ti

被引：23

作者：

Norin, L

McGinnis, S

Jansson, U

Carlsson, JO

机构：

[1] Department of Inorganic Chemistry, Ångström Laboratory, Uppsala University, P. O. Box 538

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1997年 / 15卷 / 06期

关键词：

D O I：

10.1116/1.580850

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Films of epitaxial titanium carbide were grown on MgO(001) at 400 and 500 degrees C using a novel method based on the co-evaporation of Ti and C-60. Mirrorlike, adhesive films of TiC1-x (0.2<x<0.4) were deposited at growth rates of approximately 0.1 mu m/h. X-ray diffraction showed that the crystal orientation relationship between the film and the substrate was TiC(001)//MgO(001) and TiC[100]//MgO[100]. Transmission electron microscopy and low energy electron diffraction were also used to verify the epitaxial growth of the films. (C) 1997 American Vacuum Society. [S0734-2101(97)03606-3].

引用

收藏

页码：3082 / 3085

页数：4

相关论文

共 15 条

[1] PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION OF TIN AND TIC ON STEEL - PROPERTIES OF COATINGS [J].

ARAI, T ;

FUJITA, H ;

OGURI, K .

THIN SOLID FILMS, 1988, 165 (01) :139-148

[2] THERMALLY STABLE, LOW SPECIFIC RESISTANCE (1.30X10(-5)OMEGA-CM(2)) TIC OHMIC CONTACTS TO N-TYPE 6H-ALPHA-SIC [J].

CHADDHA, AK ;

PARSONS, JD ;

KRUAVAL, GB .

APPLIED PHYSICS LETTERS, 1995, 66 (06) :760-762

[3] Growth mechanism of silicon carbide films on silicon substrates using C-60 carbonization [J].

Chen, D ;

Workman, R ;

Sarid, D .

SURFACE SCIENCE, 1995, 344 (1-2) :23-32

[4] INITIAL-STAGES OF GROWTH DURING CVD OF W ON TISI2 SUBSTRATES [J].

ENGQVIST, J ;

JANSSON, U .

THIN SOLID FILMS, 1995, 263 (01) :54-64

[5]

Ettymayer P, 1994, CARBIDES TRANSITION, V2, p[519, 531]

[6] GROWTH OF SILICON-CARBIDE FILMS VIA C-60 PRECURSORS [J].

HAMZA, AV ;

BALOOCH, M ;

MOALEM, M .

SURFACE SCIENCE, 1994, 317 (03) :L1129-L1135

[7] INVESTIGATION OF TIC FILMS SYNTHESIZED BY LOW-ENERGY ION-BOMBARDMENT [J].

HE, XM ;

LI, WZ ;

LI, HD .

JOURNAL OF MATERIALS RESEARCH, 1994, 9 (09) :2355-2361

[8] SYNTHESIS OF EPITAXIAL BETA-SIC BY C-60 CARBONIZATION OF SILICON [J].

HENKE, S ;

STRITZKER, B ;

RAUSCHENBACH, B .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) :2070-2073

[9] SURFACE-SHIFTED N-1S AND C-1S LEVELS ON THE (100) SURFACE OF TIN AND TIC [J].

JOHANSSON, LI ;

JOHANSSON, HIP ;

HAKANSSON, KL .

PHYSICAL REVIEW B, 1993, 48 (19) :14520-14523

[10] METHOD FOR THE PREPARATION OF PROTECTIVE COATINGS BY LOW-TEMPERATURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION (MOCVD) [J].

KALOYEROS, AE ;

WILLIAMS, WS ;

CONSTANT, G .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1988, 59 (07) :1209-1214