Photovoltage generation of Si/C-60 heterojunction

被引：20

作者：

Kita, K

Wen, C

Ihara, M

Yamada, K

机构：

[1] Dept. of Chemical System Engineering, University of Tokyo, Hongo, Bunkyo-ku

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 05期

关键词：

D O I：

10.1063/1.361114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photovoltage generation was observed for C-60/Si heterojunction fabricated by the deposition of C-60 thin film on Si substrate. Four types of Si substrates (two for p-type and two for n-type) were used. All junctions showed rectifying behaviors and photovoltage generation under illumination of Ar-ion laser. The highest value of the photovoltage was 0.40 V. From the saturated photovoltage values for four junctions, the Fermi level of C-60 thin film was estimated to be located about 4.7 eV below the vacuum level. (C) 1996 American Institute of Physics.

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页码：2798 / 2800

页数：3

相关论文

共 14 条

[1] HETEROJUNCTIONS OF SOLID C-60 AND CRYSTALLINE SILICON - RECTIFYING PROPERTIES AND ENERGY-BAND MODELS [J].

CHEN, KM ;

JIA, YQ ;

JIN, SX ;

WU, K ;

ZHAO, WB ;

LI, CY ;

GU, ZN ;

ZHOU, XH .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, 7 (14) :L201-L207

[2] STEADY-STATE PHOTOCONDUCTIVE RESPONSE OF C-60 C-70 FILMS [J].

KAISER, M ;

REICHENBACH, J ;

BYRNE, HJ ;

ANDERS, J ;

MASER, W ;

ROTH, S ;

ZAHAB, A ;

BERNIER, P .

SOLID STATE COMMUNICATIONS, 1992, 81 (03) :261-264

[3] SOLID C-60 - A NEW FORM OF CARBON [J].

KRATSCHMER, W ;

LAMB, LD ;

FOSTIROPOULOS, K ;

HUFFMAN, DR .

NATURE, 1990, 347 (6291) :354-358

[4] NONLINEAR TRANSIENT PHOTOVOLTAIC RESPONSE IN AL C-60 AU DEVICES - CONTROL OF POLARITY WITH OPTICAL BIAS [J].

LEE, CH ;

YU, G ;

MOSES, D ;

HEEGER, AJ ;

SRDANOV, VI .

APPLIED PHYSICS LETTERS, 1994, 65 (06) :664-666

[5] PHOTOVOLTAIC PROPERTIES OF C-60/PPP HETEROJUNCTION - MOLECULAR D-A PHOTOCELL [J].

LEE, SB ;

KHABIBULLAEV, PK ;

ZAKHIDOV, AA ;

MORITA, S ;

YOSHINO, K .

SYNTHETIC METALS, 1995, 71 (1-3) :2247-2248

[6] BAND-GAP, EXCITONS, AND COULOMB INTERACTION IN SOLID C-60 [J].

LOF, RW ;

VANVEENENDAAL, MA ;

KOOPMANS, B ;

JONKMAN, HT ;

SAWATZKY, GA .

PHYSICAL REVIEW LETTERS, 1992, 68 (26) :3924-3927

[7] PHOTOCONDUCTIVITY IN SOLID FILMS OF C60/70 [J].

MORT, J ;

OKUMURA, K ;

MACHONKIN, M ;

ZIOLO, R ;

HUFFMAN, DR ;

FERGUSON, MI .

CHEMICAL PHYSICS LETTERS, 1991, 186 (2-3) :281-283

[8] C-60 BONDING AND ENERGY-LEVEL ALIGNMENT ON METAL AND SEMICONDUCTOR SURFACES [J].

OHNO, TR ;

CHEN, Y ;

HARVEY, SE ;

KROLL, GH ;

WEAVER, JH ;

HAUFLER, RE ;

SMALLEY, RE .

PHYSICAL REVIEW B, 1991, 44 (24) :13747-13755

[9] COHESIVE MECHANISM AND ENERGY-BANDS OF SOLID C60 [J].

SAITO, S ;

OSHIYAMA, A .

PHYSICAL REVIEW LETTERS, 1991, 66 (20) :2637-2640

[10]

SARICIFTCI NS, 1993, APPL PHYS LETT, V62, P8