Direct Evidence for a Reduced Density of Deep Level Defects at Grain Boundaries of Cu(In, Ga)Se2 Thin Films

被引：63

作者：

Moenig, H. ^{[1
,2
]}

Smith, Y. ^{[1
,3
]}

Caballero, R. ^{[1
]}

Kaufmann, C. A. ^{[1
]}

Lauermann, I. ^{[1
]}

Lux-Steiner, M. Ch. ^{[1
]}

Sadewasser, S. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, D-14109 Berlin, Germany

[2] Yale Univ, Ctr Res Interface Struct & Phenomena, New Haven, CT 06511 USA

[3] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 11期

关键词：

SOLAR-CELL; CUINSE2; DEVICES;

D O I：

10.1103/PhysRevLett.105.116802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The unusual optoelectronic properties of chalcopyrite grain boundaries (GBs) have become the subject of an intense debate in recent years. In this work we investigate the defect density at GBs of Cu(In, Ga)Se-2 by scanning tunneling spectroscopy. Contrary to our expectation, our results give evidence for a reduced density of deep level defects and point to an increased density of defect levels in resonance with the lower conduction band at GBs. Our findings imply low recombination activity at GBs, and thus can explain the low impact of GBs on the efficiency of chalcopyrite based solar cells.

引用

页数：4

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