Does the local built-in potential on grain boundaries of Cu(In,Ga)Se2 thin films benefit photovoltaic performance of the device?

被引：133

作者：

Jiang, CS ^{[1
]}

Noufi, R ^{[1
]}

Ramanathan, K ^{[1
]}

AbuShama, JA ^{[1
]}

Moutinho, HR ^{[1
]}

Al-Jassim, MM ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 13期

关键词：

D O I：

10.1063/1.1793346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In a previous paper [C.-S. Jiang , Appl. Phys. Lett. 84, 3477 (2004)], we reported the existence of a local built-in potential on grain boundaries (GBs) of photovoltaic Cu(In,Ga)Se-2 (CIGS) thin films. However, whether the built-in potential benefits photovoltaic properties of the device has not been proven. Using a scanning Kelvin probe microscope, we found that, with increasing Ga content in the CIGS film, the built-in potential on the GB drops sharply in a Ga range of 28%-38%. Comparing the changes in the built-in potential, the device efficiency, and the CIGS band gap, we conclude that the built-in potential on the GB plays a significant role in the device conversion efficiency of NREL's three-stage CIGS device. (C) American Institute of Physics.

引用

页码：2625 / 2627

页数：3

共 16 条

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[2] Spatially resolved photoluminescence measurements on Cu(In,Ga)Se2 thin films [J].