Electron dynamics at semiconductor surfaces and interfaces

被引:11
作者
Haight, R
机构
[1] IBM T.J. Watson Research Center, Yorktown Hts., NY 10598
关键词
D O I
10.1016/0301-0104(95)00392-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The application of femtosecond laser photoemission to the study of electron dynamics at semiconductor surfaces and interfaces is described. Fundamental processes such as electron-electron and electron-phonon scattering, diffusion and recombination are discussed. The dynamical evolution of photoexcited electrons on the As/Ge(111) surface is studied with broadly tunable harmonics. Extension of high harmonic generation to produce photon energies approaching 80 eV have resulted in the first atomic core level photoemission spectra from a tunable femtosecond source. Possible applications of harmonics to studies of surface photochemistry are discussed.
引用
收藏
页码:231 / 244
页数:14
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