Deposition of SiO2 films from different organosilicon/O2 plasmas under continuous wave and pulsed modes

被引：24

作者：

Bapin, E ^{[1
]}

von Rohr, PR ^{[1
]}

机构：

[1] ETH Zurich, Inst Proc Engn, CH-8092 Zurich, Switzerland

来源：

SURFACE & COATINGS TECHNOLOGY | 2001年 / 142卷

关键词：

plasma-enhanced chemical vapor deposition; microwave; pulsed plasma; tetraethoxysilane; hexamethyldisiloxane;

D O I：

10.1016/S0257-8972(01)01072-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the microwave plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide from oxygen/tetraethoxysilane and oxygen/hexamethyldisiloxane under continuous wave and pulse modes. The influence of process parameters such as oxygen/organosilicon flow rate ratio, pressure and microwave power on the film characteristics has been investigated. We were interested in the film deposition rate, density, refractive index and atomic concentrations. Mass spectrometry and Langmuir probe measurements provided useful information about the gas phase and the plasma discharge. A comparison was made between the properties of films deposited with continuous wave and with equivalent powered pulsed plasma. The effect of the pulse frequency and of the pulse duty cycle was also studied. (C) 2001 Elsevier Science BN. All rights reserved.

引用

页码：649 / 654

页数：6

共 14 条

[1] Diagnostics of a chemically active, pulsed microwave plasma for deposition of quartz-like films [J].

Brockhaus, A ;

Behle, S ;

Georg, A ;

Schwabedissen, A ;

Soll, C ;

Engemann, J .

CONTRIBUTIONS TO PLASMA PHYSICS, 1999, 39 (05) :399-409

[2] SIO2 DEPOSITION FROM OXYGEN SILANE PULSED HELICON DIFFUSION PLASMAS [J].

CHARLES, C ;

BOSWELL, RW ;

KUWAHARA, H .

APPLIED PHYSICS LETTERS, 1995, 67 (01) :40-42

[3] DEPOSITION OF SILICON DIOXIDE FILMS USING THE HELICON DIFFUSION REACTOR FOR INTEGRATED-OPTICS APPLICATIONS [J].

GIROULTMATLAKOWSKI, G ;

CHARLES, C ;

DURANDET, A ;

BOSWELL, RW ;

ARMAND, S ;

PERSING, HM ;

PERRY, AJ ;

LLOYD, PD ;

HYDE, SR ;

BOGSANYI, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (05) :2754-2761

[4] THIN-FILM DEPOSITION ON INSIDE SURFACES BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION [J].

JANSEN, F ;

KROMMENHOEK, S .

THIN SOLID FILMS, 1994, 252 (01) :32-37

[5] HELICON-WAVE-EXCITED PLASMA TREATMENT OF SIOX FILMS EVAPORATED ON SI SUBSTRATE [J].

KITAYAMA, D ;

NAGASAWA, H ;

KITAJIMA, H ;

OKAMOTO, Y ;

IKOMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9A) :4747-4748

[6]

KORZEC D, 1994, PLASMA SOURCES SCI T, V3, P473

[7]

RAUPP G, 1992, J VAC SCI TECHNOL B, V10, P47

[8] TIME-MODULATED ELECTRON-CYCLOTRON-RESONANCE PLASMA DISCHARGE FOR CONTROLLING GENERATION OF REACTIVE SPECIES [J].

SAMUKAWA, S ;

FURUOYA, S .

APPLIED PHYSICS LETTERS, 1993, 63 (15) :2044-2046

[9]

SHASHANK C, 1996, J VAC SCI TECHNOL B, V14, P738

[10]

SOLL C, 1997, P 11 INT C PLASM PRO, V284, P154

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