TIME-MODULATED ELECTRON-CYCLOTRON-RESONANCE PLASMA DISCHARGE FOR CONTROLLING GENERATION OF REACTIVE SPECIES

被引:111
作者
SAMUKAWA, S [1 ]
FURUOYA, S [1 ]
机构
[1] NEC CORP LTD,MICROELECTR RES LABS,ULSI RES LAB,SAGAMIHARA,KANAGAWA 229,JAPAN
关键词
D O I
10.1063/1.110586
中图分类号
O59 [应用物理学];
学科分类号
摘要
This study examines modulated electron cyclotron resonance (ECR) plasma discharge occurring within a few tens of mus. It can control the generation of reactive species in plasmas. Reactive species are measured by an actinometric optical emission spectroscopy in the pulsed plasma. Good correlation is found between the density ratio of CF2 radicals and F atoms in the CHF3 plasma, and the combination of the pulse duration and pulse intervals. These characteristics are explained by the dependence of reactive species generation in ECR plasma on a time within a few tens of mus. This method provides for controlling the polymerization during SiO2 etching.
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页码:2044 / 2046
页数:3
相关论文
共 12 条
[1]   DEPOSITION IN DRY-ETCHING GAS PLASMAS [J].
ARAI, S ;
TSUJIMOTO, K ;
TACHI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (6B) :2011-2019
[2]   MECHANISMS OF DEPOSITION AND ETCHING OF THIN-FILMS OF PLASMA-POLYMERIZED FLUORINATED MONOMERS IN RADIOFREQUENCY DISCHARGES FED WITH C2F6-H2 AND C2F6-O2 MIXTURES [J].
DAGOSTINO, R ;
CRAMAROSSA, F ;
ILLUZZI, F .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :2754-2762
[3]  
HORIIKE Y, 1992, 43RD P S SEM INT CIR, P30
[4]  
MARKS J, 1992, 43RD P S SEM INT CIR, P54
[5]   POLYMERIZATION FOR HIGHLY SELECTIVE SIO2 PLASMA-ETCHING [J].
SAMUKAWA, S ;
FURUOYA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (9A) :L1289-L1292
[6]   400 KHZ RADIOFREQUENCY BIASED ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING FOR AL-SI-CU PATTERNING [J].
SAMUKAWA, S ;
TOYOSATO, T ;
WANI, E .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03) :1471-1477
[7]   EXTREMELY HIGH-SELECTIVE ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING FOR PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON [J].
SAMUKAWA, S ;
SUZUKI, Y ;
SASAKI, M .
APPLIED PHYSICS LETTERS, 1990, 57 (04) :403-405
[8]   EXTREMELY HIGH SELECTIVE, HIGHLY ANISOTROPIC, AND HIGH-RATE ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING FOR N+ POLY-SI AT THE ELECTRON-CYCLOTRON RESONANCE POSITION [J].
SAMUKAWA, S ;
SASAKI, M ;
SUZUKI, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06) :1192-1198
[9]   OPTIMALLY STABLE ELECTRON-CYCLOTRON RESONANCE PLASMA GENERATION AND ESSENTIAL POINTS FOR COMPACT PLASMA SOURCE [J].
SAMUKAWA, S ;
NAKAMURA, T ;
ISHIDA, T ;
ISHITANI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B) :4348-4356
[10]  
SAMUKAWA S, 1992, 9TH P S PLASM PROC P, P41