共 12 条
[1]
DEPOSITION IN DRY-ETCHING GAS PLASMAS
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1992, 31 (6B)
:2011-2019
[3]
HORIIKE Y, 1992, 43RD P S SEM INT CIR, P30
[4]
MARKS J, 1992, 43RD P S SEM INT CIR, P54
[5]
POLYMERIZATION FOR HIGHLY SELECTIVE SIO2 PLASMA-ETCHING
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1993, 32 (9A)
:L1289-L1292
[6]
400 KHZ RADIOFREQUENCY BIASED ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING FOR AL-SI-CU PATTERNING
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1991, 9 (03)
:1471-1477
[8]
EXTREMELY HIGH SELECTIVE, HIGHLY ANISOTROPIC, AND HIGH-RATE ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING FOR N+ POLY-SI AT THE ELECTRON-CYCLOTRON RESONANCE POSITION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1990, 8 (06)
:1192-1198
[9]
OPTIMALLY STABLE ELECTRON-CYCLOTRON RESONANCE PLASMA GENERATION AND ESSENTIAL POINTS FOR COMPACT PLASMA SOURCE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1992, 31 (12B)
:4348-4356
[10]
SAMUKAWA S, 1992, 9TH P S PLASM PROC P, P41