Analysis of the thermoelectric properties of n-type ZnO

被引：292

作者：

Ong, Khuong P. ^{[1
]}

Singh, David J. ^{[2
]}

Wu, Ping ^{[1
]}

机构：

[1] Inst High Performance Comp, Singapore 138632, Singapore

[2] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

来源：

PHYSICAL REVIEW B | 2011年 / 83卷 / 11期

关键词：

AL-DOPED ZNO; THERMAL-CONDUCTIVITY; ZINC-OXIDE; CERAMICS; PERFORMANCE; (ZN1-YMGY)(1-X)ALXO; GA;

D O I：

10.1103/PhysRevB.83.115110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report an investigation of the temperature- and doping-dependent thermoelectric behavior of n-type ZnO. The results are based on a combination of experimental data from the literature and calculated transport functions obtained from Boltzmann transport theory applied to the first-principles electronic structure. From this we obtain the dependence of the figure of merit ZT on doping and temperature. We find that improvement of the lattice thermal conductivity is essential for obtaining high ZT in n-type ZnO.

引用

页数：5

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