Demonstration of NAND logic switching in InAs/AlSb dual-gate HFETs

The authors demonstrate NAND logic switching in InAs/AlSb dual-gate heterostructure field-effect transistors (DG-HFETs). The present NAND gate prototype provides a proof-of-concept for InAs/AlSb HFETs-based small scale digital integrated circuits. With previously demonstrated cut-off frequencies of 93 GHz in 0.5 mu m gate InAs/AlSb HFETs, the InAs/AlSb material system appears promising for future high-speed, low-power logic applications.